Analytical study of high efficient Cu(In,Ga)Se2 solar cell with In2S3 buffer layer

Abstract

This paper represents a lucid numerical analysis of thin film Cu(In,Ga)Se2 (CIGS) solar cell with In2S3 (Indium Sulphide) buffer layer by using SCAPS-1D. The effect of band gap, concentration and thickness of both Cu(In,Ga)Se2 absorber layer and In2S3 buffer layer are investigated in this simulation. This study is focused to analyze electrical performances of In2S3 buffer layer based Cu(In,Ga)Se2 solar cell for a better substitute of toxic CdS buffer layer. The optimum thickness has found 40 nm for In2S3 buffer layer and 3000 nm for Cu(In,Ga)Se2 absorber layer. In addition, the optimum band gap of CIGS and In2S3 layer has attained 1.10 eV and 2.6 eV subsequently and 25.03% efficiency has achieved along with 0.75 V open circuit voltage (Voc), 39.435 mA/cm2 short circuit current density (Jsc) and 84.62% Fill Factor (FF).