Large plasmonic absorption enhancement effect of triangular silver nanowires in silicon: Plasmonic Triangular Nanowires in Si

Abstract

Two-dimensional finite difference time domain (FDTD) simulations were performed for evaluating optical absorption enhancement and loss effects of triangular silver (Ag) nanowires embedded in silicon (Si) thin-film photovoltaic device structures. Near-bandgap absorption enhancement in Si was much larger than the reported values of other nanostructures from similar simulations. A nanowire with equal sides of 20 nm length showed 368-fold absorption enhancement whereas only 5× and 15× values of solid spherical and two-dimensional core-shell type nanostructures, respectively. Undesirable absorption loss in the metal of the nanowire was 3.55× larger than the absorption in Si which was comparable to the value reported for the spherical nanoparticle. Interestingly, as the height of the nanowire was increased to form a sharper tip, absorption loss showed a significant drop. For a nanowire with 20 nm base and 20 nm height, absorption loss was merely 1.91× larger than the absorption in Si at the 840 nm plasmon resonance. This drop could be attributed to weaker plasmon resonance manifested by lower metallic absorption in the spatial absorption map of the nanowire. However, absorption enhancement in Si was still large due to strong plasmonic fields at the sharper and longer tip, which was effective in enhancing absorption over a larger area in Si. Our work shows that the shape of a nanostructure and its optimization can significantly affect plasmonic absorption enhancement and loss performance in photovoltaic applications.